Multilevel flash cells and their trade-offs
- 24 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 169-172
- https://doi.org/10.1109/iedm.1996.553147
Abstract
In this paper we compare six different multilevel flash cells, viz., common ground, DINOR, AND, AMG, split gate and NAND. The key conclusions are that the hot electron effect lends itself better than tunneling as the multilevel programming mechanism. The common ground cell is the most suitable for multilevel flash cells. The NAND architecture is the least favorable.Keywords
This publication has 9 references indexed in Scilit:
- An 18mb Serial Flash Eeprom For Solid-state Disk ApplicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- A 5 volt high density poly-poly erase flash EPROM cellPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Impact of cell threshold voltage distribution in the array of flash memories on scaled and multilevel flash cell designPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 3.3 V 128 Mb multi-level NAND flash memory for mass storage applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Failure mechanisms of flash cell in program/erase cyclingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A dual-bit split-gate EEPROM (DSG) cell in contactless array for single-Vcc high density flash memoriesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A multilevel-cell 32 Mb flash memoryPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Alternate metal virtual ground (AMG)-a new scaling concept for very high-density EPROMsIEEE Electron Device Letters, 1991
- A flash-erase EEPROM cell with an asymmetric source and drain structurePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987