Measurement of lattice parameters of AIBIIICVI2 chalcopyrite-type epitaxial layers using reflection high energy electron diffraction
- 16 April 1979
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 59 (1), 99-104
- https://doi.org/10.1016/0040-6090(79)90368-7
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Epitaxial layers of CuInSe2 on GaAsThin Solid Films, 1978
- Structural and electrical properties of CuGaSe2 thin films on GaAs substratesCrystal Research and Technology, 1978
- Zur Heteroepitaxie von AIBIIIC2VI‐Verbindungen – Interpretation von RHEED‐DiagrammenCrystal Research and Technology, 1978
- Crystal data for CuGaSe2Journal of Applied Crystallography, 1977
- Piezoelectric nonlinear optic CuGaS2 and CuInS2 crystal structure: Sublattice distortion in AIBIIIC2VI and AIIBIVC2V type chalcopyritesThe Journal of Chemical Physics, 1973