Epitaxial layers of CuInSe2 on GaAs
- 1 July 1978
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 52 (1), 45-52
- https://doi.org/10.1016/0040-6090(78)90253-5
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- The optical properties of CuInSe2 thin filmsThin Solid Films, 1978
- Temperature dependence of the absorption edge in cuinse2Physica Status Solidi (b), 1977
- Growth and characterization of thin‐film compound semiconductor photovoltaic heterojunctionsJournal of Vacuum Science and Technology, 1977
- Electron and X-ray diffraction analyses of ternary compound (I–III–VI2) thin filmsThin Solid Films, 1976
- Growth and properties of vacuum deposited CuInSe2 thin filmsJournal of Vacuum Science and Technology, 1976
- Physico-Chemical Considerations in the Preparation of New Compound Semiconductor Solar CellsZeitschrift für Physikalische Chemie, 1975
- Some properties of flash evaporated CuInSe2 thin filmsThin Solid Films, 1974
- The fabrication of p and n type single crystals of CuInSe2Journal of Crystal Growth, 1973
- Crystal data for CuInSe2Journal of Applied Crystallography, 1973
- Polaritätsabhängige Struktureffekte in tetraedrisch koordinierten HalbleiternCrystal Research and Technology, 1972