High CW power (>200 mW/facet) at 3.4 [micro sign]m from InAsSb/InAlAsSb strained quantum well diode lasers
- 1 January 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (14), 1296-1297
- https://doi.org/10.1049/el:19960873
Abstract
Strained quantum well diode lasers consisting of compressively strained InAsSb active layers and tensile strained InAlAsSb barrier layers have exhibited CW power of 215 mW/facet at 80 K. The internal quantum efficiency and internal loss coefficient at 80 K are estimatcd to be 63% and 9 cm-1, respectively.Keywords
This publication has 4 references indexed in Scilit:
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