High-power GaInAsSb-AlGaAsSb multiple-quantum-well diode lasers emitting at 1.9 /spl mu/m
- 1 January 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 6 (1), 7-9
- https://doi.org/10.1109/68.265873
Abstract
High-power diode lasers emitting at /spl sim/1.9 μm have been fabricated from a quantum-well heterostructure having an active region consisting of five GaInAsSb wells and six AlGaAsSb barriers. For devices 300 μm wide and 1000 μm long, single-ended output power as high as 1.3 W cw has been obtained with an initial differential quantum efficiency of 47%. The pulsed threshold current density is as low as 143 A/cm 2 for 2000-μm-long devices.Keywords
This publication has 9 references indexed in Scilit:
- Mid-infrared diode lasersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- High-power 2.0 mu m InGaAsP laser diodesIEEE Photonics Technology Letters, 1993
- Low threshold continuous operation of InGaAs/InGaAsP quantum well lasers at ~2.0 μmElectronics Letters, 1993
- High-power multiple-quantum-well GaInAsSb/AlGaAsSb diode lasers emitting at 2.1 μm with low threshold current densityApplied Physics Letters, 1992
- Improving InAs double heterostructure lasers with better confinementIEEE Journal of Quantum Electronics, 1992
- InGaAs/InGaAsp/InP strained-layer quantum well lasers at ~2 μmElectronics Letters, 1992
- Room-temperature cw operation at 2.2 μm of GaInAsSb/AlGaAsSb diode lasers grown by molecular beam epitaxyApplied Physics Letters, 1991
- High-efficiency high-power GaInAsSb-AlGaAsSb double-heterostructure lasers emitting at 2.3 mu mIEEE Journal of Quantum Electronics, 1991
- Continuous-wave lasing at room temperature in InGaSbAs/GaAlSbAs injection heterostructures emitting in the spectral range 2.2–2.4 μmSoviet Journal of Quantum Electronics, 1988