Electrical and electron microscope observations on antimony-implanted silicon
- 1 November 1969
- journal article
- Published by Springer Nature in Journal of Materials Science
- Vol. 4 (11), 997-1002
- https://doi.org/10.1007/bf00555316
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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- Improved profiles of electrical activity in boron implanted siliconPhysics Letters A, 1968
- Anomalous penetration of Ga and In implanted in siliconPhysics Letters A, 1968
- Observation of ion bombardment damage in siliconPhilosophical Magazine, 1968
- Ion implantation in semiconductors—Part I: Range distribution theory and experimentsProceedings of the IEEE, 1968
- ION IMPLANTATION OF SILICON: II. ELECTRICAL EVALUATION USING HALL-EFFECT MEASUREMENTSCanadian Journal of Physics, 1967
- Ion-implantation doping of semiconductorsJournal of Materials Science, 1967
- Resistivity of Bulk Silicon and of Diffused Layers in SiliconBell System Technical Journal, 1962
- Energy Dissipation by Ions in the kev RegionPhysical Review B, 1961