Electrons and “SURFONS” in a semiconductor inversion layer
- 28 February 1971
- journal article
- other
- Published by Elsevier in Surface Science
- Vol. 24 (2), 654-658
- https://doi.org/10.1016/0039-6028(71)90291-3
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Electron mobility in a semiconductor inversion layer: Possible contribution from bulk phononsSurface Science, 1971
- Determination of Deformation Potential Constants from the Electron Cyclotron Resonance in Germanium and SiliconJournal of the Physics Society Japan, 1970
- The Two-Dimensional Lattice Scattering Mobility in a Semiconductor Inversion LayerJournal of the Physics Society Japan, 1969
- Transport Properties of Electrons in Inverted Silicon SurfacesPhysical Review B, 1968
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967
- Magneto-Oscillatory Conductance in Silicon SurfacesPhysical Review Letters, 1966
- Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic ScatteringPhysical Review B, 1956
- Measurement of Elastic Constants at Low Temperatures by Means of Ultrasonic Waves–Data for Silicon and Germanium Single Crystals, and for Fused SilicaJournal of Applied Physics, 1953