The Two-Dimensional Lattice Scattering Mobility in a Semiconductor Inversion Layer
- 1 October 1969
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 27 (4), 906-908
- https://doi.org/10.1143/jpsj.27.906
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Effect of the Crystal Orientation upon Electron Mobility at the Si-SiO2 InterfaceJapanese Journal of Applied Physics, 1969
- Effects of Crystallographic Orientation on Mobility, Surface State Density, and Noise in p-Type Inversion Layers on Oxidized Silicon SurfacesJapanese Journal of Applied Physics, 1969
- Transport Properties of Electrons in Inverted Silicon SurfacesPhysical Review B, 1968
- Quantum Theory of Transport in Narrow ChannelsPhysical Review B, 1968
- Mobility Anisotropy and Piezoresistance in Silicon p-Type Inversion LayersJournal of Applied Physics, 1968
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967
- Magneto-Oscillatory Conductance in Silicon SurfacesPhysical Review Letters, 1966
- Theory of the Electrical Properties of Germanium and SiliconPublished by Elsevier ,1955
- Deformation Potentials and Mobilities in Non-Polar CrystalsPhysical Review B, 1950