Effects of Dislocation and Stress on Characteristics of GaAs-Based Laser Grown on Si by Metalorganic Chemical Vapor Deposition
- 1 March 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (3R), 791
- https://doi.org/10.1143/jjap.31.791
Abstract
The thermally induced biaxial tensile stress in GaAs/Si is reduced by postgrowth patterning, and the reduction in stress is dependent on the pattern size and shape. For narrow stripe patterns the stress relief is obtained perpendicular to the stripe. For small square patterns the stress is relieved in both directions. Thermal cycle annealing is also effective in reducing the threading dislocations in GaAs/Si. A thermally cycle-annealed multi-quantum-well (MQW) laser on a Si substrate grown by metalorganic chemical vapor deposition has continuous threshold current as low as 24 mA at 300 K. Rapid degradation can be suppressed by postgrowth patterning for the thermally cycle-annealed laser with an 8-µm-wide stripe, which results from the reduction of the biaxial stress to the uniaxial stress.Keywords
This publication has 17 references indexed in Scilit:
- Room-temperature continuous-wave operation of AlGaAs-GaAs single-quantum-well lasers on Si by metalorganic chemical-vapor deposition using AlGaAs-AlGaP intermediate layersIEEE Journal of Quantum Electronics, 1991
- Photoluminescence measurements for GaAs grown on Si(100) and Si(111) by molecular beam epitaxyApplied Physics Letters, 1991
- Room-Temperature CW Operation of AlGaAs/GaAs SQW Lasers on Si Substrates by MOCVD Using AlGaAs/AlGaP Intermediate LayersJapanese Journal of Applied Physics, 1990
- Low etch pit density GaAs on Si grown by metalorganic chemical vapor depositionApplied Physics Letters, 1990
- Analysis for dislocation density reduction in selective area grown GaAs films on Si substratesApplied Physics Letters, 1990
- Photoluminescence Study of GaAs Grown Directly on Si SubstratesJapanese Journal of Applied Physics, 1987
- Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substratesApplied Physics Letters, 1987
- Dislocation reduction in epitaxial GaAs on Si(100)Applied Physics Letters, 1986
- Piezoresistance and the conduction-band minima of GaAsPhysical Review B, 1978
- Piezo-Electroreflectance in Ge, GaAs, and SiPhysical Review B, 1968