Low etch pit density GaAs on Si grown by metalorganic chemical vapor deposition
- 9 April 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (15), 1433-1435
- https://doi.org/10.1063/1.102489
Abstract
GaAs was grown on a Si substrate by metalorganic chemical vapor deposition using GaAs/GaAsP strained‐layer superlattice (SLS) intermediate layers. The dislocation density decreases at the interface between GaAs and the SLS, but does not decrease in the SLS. When a GaAs/GaAsP SLS is used as the intermediate layer, part of the threading dislocation propagates into the top GaAs layer because of the lattice mismatch of GaAs and SLS. The low etch pit density of (3–5)×105 cm−2 was obtained by using the intermediate layer of a GaAs/GaAsP SLS and an AlAs/GaAs superlattice with thermal cycle annealing.Keywords
This publication has 7 references indexed in Scilit:
- Defect Characterization of GaAs on Si Grown by MOCVDJapanese Journal of Applied Physics, 1989
- Misfit stress dependence of dislocation density reduction in GaAs films on Si substrates grown by strained-layer superlatticesApplied Physics Letters, 1989
- Dislocation‐free GaAs epitaxial growth with the use of modulation‐doped AlAs‐GaAs superlattice buffer layersApplied Physics Letters, 1988
- MOCVD growth and characterization of GaAs and GaP grown on Si substratesJournal of Crystal Growth, 1988
- Structural properties of GaAs-on-Si with InGaAs/GaAs strained-layer superlatticeJournal of Crystal Growth, 1988
- Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVDJapanese Journal of Applied Physics, 1984
- Defects in epitaxial multilayersJournal of Crystal Growth, 1974