Dechanneling by dislocations in ion-implanted Al
- 1 September 1978
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 18 (5), 2078-2096
- https://doi.org/10.1103/physrevb.18.2078
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Channeling analysis of stacking defects in epitaxial Si layersNuclear Instruments and Methods, 1978
- Off-axis channeling disorder analysisJournal of Applied Physics, 1976
- Dechanneling measurements of defect depth profiles and effective cross-channel distribution of misaligned atoms in ion-irradiated goldNuclear Instruments and Methods, 1976
- The additivity of dechanneling from lattice vibrations and point defectsRadiation Effects, 1975
- Dechanneling of fast particles by lattice defectsJournal of Nuclear Materials, 1974
- Small-angle multiple scattering of ions in the screened Coulomb regionNuclear Instruments and Methods, 1974
- Energy Dependence ofandChanneling in Si Overlaid with Au FilmsPhysical Review B, 1973
- Dechanneling by stacking faults and dislocationsRadiation Effects, 1972
- Defect studies in crystals by means of channelingCanadian Journal of Physics, 1968
- Dechannelling Cylinder of DislocationsPhysica Status Solidi (b), 1968