An experimental 4Mb CMOS DRAM
- 1 January 1986
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. XXIX, 272-273
- https://doi.org/10.1109/isscc.1986.1157013
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- A 50 µ A standby 1MW × 1b/256KW × 4b CMOS DRAMPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986
- A 1Mb CMOS DRAM with fast page and static column modesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1985
- A deep-trenched capacitor technology for 4 mega bit dynamic RAMPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1985
- Submicron CMOS technologies for four mega bit dynamic RAMPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1985