Investigation of Sn-doped GaAs epilayers grown by low pressure metal-organic chemical vapor deposition
- 1 January 1983
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (1), 88-89
- https://doi.org/10.1063/1.93737
Abstract
Tetraethyltin was used as a source of Sn dopant in homoepitaxial GaAs films grown from triethylgallium and arsine by low pressure metal-organic chemical vapor deposition. Epitaxial crystallinity was examined by using the x-ray back reflection Laue method. The carrier concentration is uniform in the Sn-doped epilayers and the transition region can be controlled to within 0.2 μm. The current-voltage characteristics were also examined. The accumulation of Sn on the surface of the epilayer was observed by Auger electron spectroscopy.Keywords
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