Organic CuTCNQ integrated in complementary metal oxide semiconductor copper back end-of-line for nonvolatile memories
- 27 November 2006
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 89 (22)
- https://doi.org/10.1063/1.2388883
Abstract
Nanowires of the organometallic semiconductor CuTCNQ were grown from TCNQ vapor in 250nm diameter vias of a Cu back end-of-line process. Corresponding prototypes of cross-point Cu∕CuTCNQ nanowire/Al memories exhibited nonvolatile bistable conductive switching for several ten write-erase cycles with switching currents below 10μA and current densities 1000 times higher than for large-area devices. Scaling of memory elements was also investigated.Keywords
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