Room temperature GaAsSi and InPSi wafer direct bonding by the surface activated bonding method
- 1 January 1997
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 121 (1-4), 203-206
- https://doi.org/10.1016/s0168-583x(96)00546-0
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Fabrication of (001) InP-based 1.55-μm wavelength lasers on a (110) GaAs substrate by direct bonding (A prospect for free-orientation integration)Applied Physics Letters, 1995
- High-quality InGaAs/InP multiquantum-well structures on Si fabricated by direct bondingElectronics Letters, 1994
- Low threshold, wafer fused long wavelength vertical cavity lasersApplied Physics Letters, 1994
- Electrical characteristics of directly-bonded GaAs and InPApplied Physics Letters, 1993
- Structure of AlAl and AlSi3N4 interfaces bonded at room temperature by means of the surface activation methodActa Metallurgica et Materialia, 1992
- Bonding by atomic rearrangement of InP/InGaAsP 1.5 μm wavelength lasers on GaAs substratesApplied Physics Letters, 1991
- Wafer fusion: A novel technique for optoelectronic device fabrication and monolithic integrationApplied Physics Letters, 1990