High-quality InGaAs/InP multiquantum-well structures on Si fabricated by direct bonding
- 9 June 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (12), 1008-1009
- https://doi.org/10.1049/el:19940657
Abstract
High-quality InGaAs/InP multiquantum-well (MQW) structures have been successfully fabricated on Si substrates by direct bonding. These structures were first grown on InP substrates, then bonded at 700 °C on to Si substrates with buffer layers. The etch-pit densities of the InP surfaces are significantly low, ~104cm-2, the lowest values ever reported. Furthermore, strong relative photoluminescence intensity from the MQW structures, over 70% of that before bonding, is obtained.Keywords
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