Ferroelectric bismuth titanate/superconductor (Y-Ba-Cu-O) thin-film heterostructures on silicon
- 30 September 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (14), 1782-1784
- https://doi.org/10.1063/1.106199
Abstract
The growth by pulsed‐laser deposition of c‐axis‐oriented bismuth titanate (BTO)/YBa2Cu3O7(YBCO) superconductor heterostructures on [001]‐oriented Si with epitaxial yttria‐stabilized ZrO2 as a buffer layer is reported. X‐ray‐diffraction studies of the heterostructures show that all the layers grow in the c‐axis orientation, with a rocking angle of 1.0°–1.2° for the bismuth titanate layer and 0.6°–0.8° for the YBCO layer. Rutherford backscattering ion channeling yields of 28% at the surface have been obtained. Transmission electron microscopy of cross‐sectioned samples reveal that the BTO layer has a significant density of translational boundaries that propagate at 45° to the film surface. The BTO film exhibits ferroelectric hysteresis and a dielectric constant in the range of 180–200.Keywords
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