The stress distribution and curvature of a general compositionally graded semiconductor layer
- 1 September 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 132 (1-2), 341-344
- https://doi.org/10.1016/0022-0248(93)90280-a
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Calculation of stresses in GaAs/Si strained heterostructuresJournal of Crystal Growth, 1992
- Calculation of stresses in In0.12Ga0.88As ternary bulk crystals with compositionally graded In1 − xGaxAs layers on GaAs seedsJournal of Crystal Growth, 1991