Calculation of stresses in In0.12Ga0.88As ternary bulk crystals with compositionally graded In1 − xGaxAs layers on GaAs seeds
- 1 September 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 113 (3-4), 477-484
- https://doi.org/10.1016/0022-0248(91)90082-g
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
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