Quantum-Limit Piezoresistance of n-Type Inversion Layers of Silicon and Germanium
- 1 February 1972
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 43 (2), 735-737
- https://doi.org/10.1063/1.1661190
Abstract
Piezoresistance effects at small and large stresses in n‐type inversion layers of germanium and silicon are discussed by taking proper account of the surface quantization. It is predicted that the quantum‐limit condition peculiar to the inversion layer strongly affects the piezoresistance on Si {100}, {110} and Ge {111}, {110} surfaces.Keywords
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