InP metal/oxide/semiconductor devices incorporating Al2O3 dielectrics chemically vapour deposited at low pressure
- 1 May 1982
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 91 (4), 339-348
- https://doi.org/10.1016/0040-6090(82)90257-7
Abstract
No abstract availableKeywords
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