The properties of GaAs-Al2O3 and InP-Al2O3 interfaces and the fabrication of MIS field-effect transistors
- 1 January 1979
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 56 (1-2), 215-223
- https://doi.org/10.1016/0040-6090(79)90066-x
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
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