Diffusion of Boron in Silicon through Oxide Layer
- 1 December 1962
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 1 (6)
- https://doi.org/10.1143/jjap.1.314
Abstract
The diffusion of boron into silicon through thermally grown oxide layers has been studied by an open tube diffusion technique. The experimental data are interpreted by a two boundary diffusion model, and diffusion constant of boron in silicon oxide is determined at several temperatures. The diffusion constant obtained at 1150°C is 1.2×10-16cm2/sec with an activation energy of ΔH=78 kcal/mol. An anomalous diffusion is observed at a high impurity vapour pressure and a series of experimental results suggests conversion of silicon oxide into a “glassy layer” of unknown composition.Keywords
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