Gain and dynamics of excitons in MOVPE‐grown ZnSe/ZnSxSe1 − x heterostructures
- 1 January 1994
- journal article
- research article
- Published by Wiley in Advanced Materials for Optics and Electronics
- Vol. 3 (1-6), 51-55
- https://doi.org/10.1002/amo.860030108
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Laser processes in wide gap II–VI semiconductorsAdvanced Materials for Optics and Electronics, 1994
- Excitonic gain and stimulated emission in ZnSe-based quantum wells up to room temperatureSurface Science, 1992
- Reduced incorporation of unintentional impurities and intrinsic defects in ZnSe and ZnS grown by MOVPEJournal of Crystal Growth, 1992
- Blue-green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wellsApplied Physics Letters, 1991
- Extremely-low-threshold and high-temperature operation in a photopumped ZnSe/ZnSSe blue laserApplied Physics Letters, 1991
- Blue-green laser diodesApplied Physics Letters, 1991
- High Output Power (>20 W) and High Quantum Efficiency in a Photopumped ZnSe/ZnSSe Blue Laser Operating at Room TemperatureJapanese Journal of Applied Physics, 1991
- ZnS/ZnSe/GaAs heterostructures grown by metal-organic vapour phase epitaxyMaterials Science and Engineering B, 1991
- p-type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growthApplied Physics Letters, 1990
- Optical properties of highly excited direct gap semiconductorsPhysics Reports, 1981