Electron-transport dynamics in quantized intrinsic GaAs

Abstract

Information on the self-energy of quantized current-carrying electron states in intrinsic GaAs has been obtained. The lifetime of $\Gamma$ electron states in double-barrier resonant-tunnel structures depends on the well width, longitudinal optical phonon scattering, and transfer into the subsidiary $X$ and $L$ minima. Application of a magnetic field parallel to the direction of current injection totally quantizes the electronic system and enhances the lifetime of low-energy electron states.