Electron-transport dynamics in quantized intrinsic GaAs
- 15 December 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 36 (17), 9402-9405
- https://doi.org/10.1103/physrevb.36.9402
Abstract
Information on the self-energy of quantized current-carrying electron states in intrinsic GaAs has been obtained. The lifetime of electron states in double-barrier resonant-tunnel structures depends on the well width, longitudinal optical phonon scattering, and transfer into the subsidiary and minima. Application of a magnetic field parallel to the direction of current injection totally quantizes the electronic system and enhances the lifetime of low-energy electron states.
Keywords
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