Resonant magnetotunneling in GaAlAs-GaAs-GaAlAs heterostructures
- 15 February 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 33 (4), 2893-2896
- https://doi.org/10.1103/physrevb.33.2893
Abstract
We report the observation of resonant tunneling of electrons through Landau levels in double-barrier GaAlAs-GaAs-GaAlAs heterostructures, in the presence of a strong magnetic field perpendicular to the interfaces. This is a two-dimensional magnetotunneling effect which manifests itself as periodic structures in the current-voltage characteristics, with a period proportional to the electron cyclotron energy in the GaAs quantum well, from which the electron effective mass is determined.Keywords
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