Inversion layers on germanium with low-temperature-deposited aluminum-phosphorus oxide dielectric films
- 1 December 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (22), 1534-1536
- https://doi.org/10.1063/1.97273
Abstract
Mixed aluminum‐phosphorus oxide films deposited on Ge (100) under ultrahigh vacuum conditions at low temperatures (≊200 °C) are found to yield low interface state densities near the band edges which are sufficient for observing both p‐ and n‐channel‐type inversion layers. As a glass‐promoting additive, it is speculated that phosphorus reduces bonding disorder at Ge/GeO2 interfaces.Keywords
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