Compensating defects and electrical activation of donors in CdS
- 1 December 1999
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 273-274, 907-910
- https://doi.org/10.1016/s0921-4526(99)00551-7
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Doping limits in II–VI compounds — Challenges, problems and solutionsProgress in Crystal Growth and Characterization of Materials, 1998
- Characterisation of ZnSe and other II–VI semiconductors by radioactive dopantsPhysica B: Condensed Matter, 1993
- Defects in CdS: In detected by perturbed angular correlation spectroscopy (PAC)Applied Surface Science, 1991
- Electrical properties of pure CdSJournal of Applied Physics, 1985
- Evaluation of impurity content by Hall effect analysis in CdSJournal of Crystal Growth, 1982
- Anomalous mobility behavior in CdS and CdTe: Electrical evidence for impurity pairsPhysical Review B, 1974