Doping limits in II–VI compounds — Challenges, problems and solutions
- 1 January 1998
- journal article
- Published by Elsevier in Progress in Crystal Growth and Characterization of Materials
- Vol. 36 (4), 291-357
- https://doi.org/10.1016/s0960-8974(98)00011-4
Abstract
No abstract availableKeywords
This publication has 316 references indexed in Scilit:
- Diode characteristics of Li3N-diffused ZnSe grown by MOVPEJournal of Crystal Growth, 1997
- Novel results on compensation processes in ZnSe:NJournal of Crystal Growth, 1996
- Compensation in heavily N-doped ZnSe: a luminescence studyJournal of Crystal Growth, 1996
- Growth issues for blue-green laser diodesJournal of Crystal Growth, 1996
- Influence of compensation on the luminescence of nitrogen-doped ZnSe epilayers grown by MOVPEJournal of Crystal Growth, 1996
- Characterization of low defect density blue-green lasersJournal of Crystal Growth, 1996
- Light emitting diodes from MOVPE-grown p- and n-doped II–VI compoundsJournal of Crystal Growth, 1996
- Hydrostatic pressure study of indium DX-like centers in MBE-grown CdTe and CdMnTe layersJournal of Crystal Growth, 1996
- Solubilities, defect reactions and doping limits in ZnSeJournal of Crystal Growth, 1992
- Theory of the self-compensation in p-type ZnSeJournal of Crystal Growth, 1992