Impact of the Ga concentration on the microstructure of CuIn1–xGaxSe2
- 29 April 2008
- journal article
- Published by Wiley in Physica Status Solidi (RRL) – Rapid Research Letters
- Vol. 2 (3), 135-137
- https://doi.org/10.1002/pssr.200802059
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Transfer of Cu(In,Ga)Se2 thin film solar cells to flexible substrates using an in situ process controlThin Solid Films, 2005
- Development of thin‐film Cu(In,Ga)Se2 and CdTe solar cellsProgress In Photovoltaics, 2004
- Influence of the selenium flux on the growth of Cu(In,Ga)Se2 thin filmsThin Solid Films, 2003
- Growth of CuInSe2 crystals in Cu-rich Cu–In–Se thin filmsJournal of Materials Research, 1997
- High-efficiency CuInxGa1−xSe2 solar cells made from (Inx,Ga1−x)2Se3 precursor filmsApplied Physics Letters, 1994
- Growth Mechanisms and Diffusion in Multinary and Multilayer Chalcopyrite Thin FilmsJapanese Journal of Applied Physics, 1993
- Thoughts on the microstructure of polycrystalline thin film CuInSe2 and its impact on material and device performanceSolar Cells, 1991
- X-ray study of CuGa
x
In1−x
Se2 solid solutionsJournal of Applied Crystallography, 1989
- CuInSe2/CdS heterojunction photovoltaic detectorsApplied Physics Letters, 1974