Mechanism of germanium plasma nitridation
- 1 September 2006
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 24 (5), 2442-2448
- https://doi.org/10.1116/1.2348887
Abstract
No abstract availableThis publication has 26 references indexed in Scilit:
- Characterization of Ultra Thin Oxynitride Formed by Radical Nitridation with Slot Plane Antenna PlasmaJapanese Journal of Applied Physics, 2005
- Interfacial characteristics of HfO2 grown on nitrided Ge (100) substrates by atomic-layer depositionApplied Physics Letters, 2004
- Ultrathin$hbox Al_2hbox O_3$and$hboxHfO_2$Gate Dielectrics on Surface-Nitrided GeIEEE Transactions on Electron Devices, 2004
- Oxynitridation using radical-oxygen and -nitrogen for high-performance and highly reliable n/pFETsIEEE Transactions on Electron Devices, 2002
- Distinctly different thermal decomposition pathways of ultrathin oxide layer on Ge and Si surfacesApplied Physics Letters, 2000
- Monolayer-level controlled incorporation of nitrogen at Si–SiO2 interfaces using remote plasma processingJournal of Vacuum Science & Technology A, 1999
- Silicon nitride film growth for advanced gate dielectric at low temperature employing high-density and low-energy ion bombardmentJournal of Vacuum Science & Technology A, 1999
- Selective bond-breaking and bond-making in oxynitride of Si and Ge: a case of chemical bond manipulationSurface Science, 1997
- Oxidation of Ge(100) and Ge(111) surfaces: an UPS and XPS studySurface Science, 1995
- Self-aligned germanium MOSFETs using a nitrided native oxide gate insulatorIEEE Electron Device Letters, 1988