High gain power switching using field controlled thyristors
- 31 May 1982
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 25 (5), 345-353
- https://doi.org/10.1016/0038-1101(82)90118-6
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- The asymmetrical field-controlled thyristorIEEE Transactions on Electron Devices, 1980
- High temperature performance of field controlled thyristorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1980
- Grid depth dependence of the characteristics of vertical channel field controlled thyristorsSolid-State Electronics, 1979
- Vertical channel field-controlled thyristors with high gain and fast switching speedsIEEE Transactions on Electron Devices, 1978
- A field terminated diodeIEEE Transactions on Electron Devices, 1976