Vertical channel field-controlled thyristors with high gain and fast switching speeds
- 1 October 1978
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 25 (10), 1261-1265
- https://doi.org/10.1109/t-ed.1978.19262
Abstract
A new, planar, surface-grid, field-controlled thyristor (FCT) structure is described. The structure is fabricated by using orientation-dependent (preferential) etching and selective vapor epitaxial growth to obtain vertical grid walls. The resulting high channel-length-to-width aspect ratio produces devices with high blocking gains and fast gate turnoff speeds. Devices have been fabricated with the capability of blocking more than 1000 V with an applied grid bias of 32 V, and simultaneously exhibiting a low forward voltage drop in the on-state. These surface-grid devices exhibit gate turnoff capability with turnoff times of less than 500 ns at a rated cathode-anode current of 1 A.Keywords
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