Diffusion of Boron into Silicon

Abstract

The diffusion of boron into silicon has been investigated over a temperature range of 1050°C to 1350°C using an open‐tube vapor‐solid diffusion technique at atmospheric pressure. A p‐n junction method of measuring the diffused layer was used to determine the diffusion constant. Lower diffusivities and a somewhat lower activation energy, (ΔH=81 kcal) were obtained than those reported previously. The difference is attributed to variation of diffusivity with surface concentration and is discussed on the basis of field‐aided diffusion theory.