Schottky barrier diode characteristics under high level injection
- 1 January 1990
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 33 (1), 39-46
- https://doi.org/10.1016/0038-1101(90)90007-2
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Calculation of charge distributions and minority-carrier injection ratio for high-barrier schottky diodesSolid-State Electronics, 1985
- The SINFET: a new high conductance, high switching speed MOS-gated transistorElectronics Letters, 1985
- On the current-voltage characteristics of epitaxial Schottky barrier diodesSolid-State Electronics, 1984
- On the minority charge storage for an epitaxial Schottky-barrier diodeIEEE Transactions on Electron Devices, 1983
- Schottky rectifiers on silicon using high barriersSolid-State Electronics, 1983
- Current transport in an ion-implanted diodeSolid-State Electronics, 1981
- Control of Schottky barrier height using highly doped surface layersSolid-State Electronics, 1976
- Minority carrier injection of metal-silicon contactsSolid-State Electronics, 1969
- Minority carrier injection and charge storage in epitaxial Schottky barrier diodesSolid-State Electronics, 1965
- On Carrier Accumulation, and the Properties of Certain Semiconductor Junctions†Journal of Electronics and Control, 1958