Electrical properties of manganese-doped gallium phosphide

Abstract

Single crystals of GaP : Mn were grown by the LEC and VGF techniques. From Hall‐effect measurements, a simple acceptor defect with an energy level 0.4–0.43 eV from the valence band was observed, the higher values being characteristic of light doping. EPR shows an isotropic spectrum with a g value of 2.002 which suggests a d⁵ configuration in cubic symmetry. This implies that the principal defect in as‐grown material involves Mn on lattice sites in place of gallium and that there is no complexing with vacancies or with other impurities. Other levels, however, are seen following anneals.