Anisotropic Transport in InGaAs/GaAs Heterostructures Grown by Movpe
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Influence of substrate misorientation on defect and impurity incorporation in GaAs/AlGaAs heterostructures grown by molecular-beam epitaxyJournal of Applied Physics, 1988
- Relaxation of strained-layer semiconductor structures via plastic flowApplied Physics Letters, 1987
- Critical layer thickness in In0.2Ga0.8As/GaAs single strained quantum well structuresApplied Physics Letters, 1987
- Anisotropic transport in modulation-doped quantum-well structuresJournal of Applied Physics, 1987
- Influence of built-in strain on Hall effect in InGaAs/GaAs quantum well structures with p-type modulation dopingApplied Physics Letters, 1986
- Material properties of high-quality GaAs epitaxial layers grown on Si substratesJournal of Applied Physics, 1986
- High resolution electron microscopy of misfit dislocations in the GaAs/Si epitaxial interfaceApplied Physics Letters, 1986
- Dependence of critical layer thickness on strain for InxGa1−xAs/GaAs strained-layer superlatticesApplied Physics Letters, 1985
- Method for Measuring Electrical Resistivity of Anisotropic MaterialsJournal of Applied Physics, 1971
- Measurement of the Resistivity Constants of Anistotropic Conductors by means of Plane-Parallel Discs of Arbitrary Shape†Journal of Electronics and Control, 1959