Influence of built-in strain on Hall effect in InGaAs/GaAs quantum well structures with p-type modulation doping
- 8 September 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (10), 581-583
- https://doi.org/10.1063/1.97047
Abstract
Hall‐effect data between 4 and 300 K on p‐type strained quantum well structures in the InGaAs alloy system show pronounced effects due to the strain‐induced splitting of the heavy‐ and light‐hole valence bands. As a function of biaxial compression in the range 0.5–1.4%, the 77 K mobilities increase monotonically by a factor of ∼5, as does a high‐temperature activation energy which is found to be nearly equal to the predicted strain splitting.Keywords
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