Bound impurity in GaAs-Ga1−κAlκAs quantum-well wires

Abstract

The binding energies of a hydrogenic impurity located in quantum-well wires of GaAs surrounded by ${\mathrm{Ga}}_{1\mathrm{-}\mathrm{\kappa }}$ ${\mathrm{Al}}_{\mathrm{\kappa }}$As are calculated as a function of the size of the wire for several values of the heights of the potential barriers and different positions of the impurity inside the wire. The calculations are also performed for the case of an asymmetric potential barrier with different heights in the two directions perpendicular to the wire. The results we have obtained show that the binding energies are closely correlated to the sizes of the wire, the impurity positions, and the height of the barrier, and also that their magnitudes are greater than those in comparable two-dimensional quantum wells.