Thermally modulated photoluminescence inGaxIn1−xAs−InPquatum wells

Abstract

The utility of the thermally modulated photoluminescence technique is demonstrated for ${\mathrm{Ga}}_x{\mathrm{In}}_{1-x}\mathrm{As}-\mathrm{InP}$ quantum wells. Using different well widths, we have measured the binding energy of excitons (either free or impurity bound) in these structures. The binding energy increases monotonically with decreasing well thicknesses, in good agreement with the available theoretical predictions for free excitons.