Thermally modulated photoluminescence inquatum wells
- 15 July 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 34 (2), 1356-1359
- https://doi.org/10.1103/physrevb.34.1356
Abstract
The utility of the thermally modulated photoluminescence technique is demonstrated for quantum wells. Using different well widths, we have measured the binding energy of excitons (either free or impurity bound) in these structures. The binding energy increases monotonically with decreasing well thicknesses, in good agreement with the available theoretical predictions for free excitons.
Keywords
This publication has 17 references indexed in Scilit:
- Excitons formed between excited sub-bands in GaAs-Ga1-xAlxAs quantum wellsJournal of Physics C: Solid State Physics, 1985
- GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxyApplied Physics Letters, 1985
- Room-temperature excitons in 1.6-μm band-gap GaInAs/AlInAs quantum wellsApplied Physics Letters, 1985
- Observation of heavy-hole and light-hole excitons in InGaAs/InAlAs MQW structures at room temperatureElectronics Letters, 1985
- Growth of Ga0.47In0.53As-InP quantum wells by low pressure metalorganic chemical vapor depositionApplied Physics Letters, 1983
- Exciton binding energy in quantum wellsPhysical Review B, 1982
- Observation of the excited level of excitons in GaAs quantum wellsPhysical Review B, 1981
- Intrinsic radiative recombination from quantum states in GaAs-AℓxGa1−xAs multi-quantum well structuresSolid State Communications, 1981
- Luminescence studies of optically pumped quantum wells in GaAs-multilayer structuresPhysical Review B, 1980
- Quantum States of Confined Carriers in Very Thin -GaAs- HeterostructuresPhysical Review Letters, 1974