Growth of Ga0.47In0.53As-InP quantum wells by low pressure metalorganic chemical vapor deposition

Abstract

We describe the growth of multiquantum well and single quantum well Ga_0.47In_0.53As‐InP structures by low pressure metalorganic chemical vapor deposition. The multiwell structure consists of 25‐, 50‐, 100‐, and 200‐Å quantum wells (Ga_0.47In_0.53As layers) separated by 500‐Å barriers (InP layers). Auger measurements indicate the presence of four distinct wells with abrupt boundaries. Photoluminescence measurements are consistent with the existence of four wells; however, deviations are noted between experimentally determined and theoretically predicted recombination energies. An analogous situation exists for the single (50 and 100 Å) quantum well structures. Possible explanations, including variation of well composition, variation of well thickness, and participation of impurities in the recombination process are suggested.