A 180 Amp/4.5 kV 4H-SiC PiN Diode for High Current Power Modules
- 8 August 2006
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Structure of recombination-induced stacking faults in high-voltage SiC p–n junctionsApplied Physics Letters, 2002
- Long Term Operation of 4.5kV PiN and 2.5kV JBS DiodesMaterials Science Forum, 2001