Structure of recombination-induced stacking faults in high-voltage SiC p–n junctions

Abstract

The structure of stacking faults formed in forward-biased 4H- and 6H-SiC ${\mathrm{p–n}}^{-}$ diodes was determined using conventional and high-resolution transmission electron microscopy. Typical fault densities were between ${10}^3$ and ${10}^4\hspace{0.17em}{\mathrm{cm}}^{\text{−1}}.$ All observed faults were isolated single-layer Shockley faults bound by partial dislocations with Burgers vector of $\text{a/3〈1–100〉}$ -type.