In-situ quality monitoring during the deposition of a-Si:H films
- 1 January 1993
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 63 (1-4), 222-226
- https://doi.org/10.1016/0169-4332(93)90094-r
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Ultrafast recombination and trapping in amorphous siliconPhysical Review B, 1990
- The study of charge carrier kinetics in semiconductors by microwave conductivity measurements. II.Journal of Applied Physics, 1988
- The study of charge carrier kinetics in semiconductors by microwave conductivity measurementsJournal of Applied Physics, 1986
- Comparative study of time-resolved conductivity measurements in hydrogenated amorphous siliconJournal of Applied Physics, 1985