DLTS method using a single temperature scanning
- 16 March 1981
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 64 (1), 85-93
- https://doi.org/10.1002/pssa.2210640108
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- How to Determine Parameters of Deep Levels by DLTS Single Temperature ScanningJapanese Journal of Applied Physics, 1979
- A simple signal analyser for deep-level trap spectroscopyJournal of Physics E: Scientific Instruments, 1977
- Electron traps in bulk and epitaxial GaAs crystalsElectronics Letters, 1977
- Nonradiative Recombination at Deep Levels in GaAs and GaP by Lattice-Relaxation Multiphonon EmissionPhysical Review Letters, 1975
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974