Importance of surface processes in defect formation in a-Si:H

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1 December 1993

journal article
Published by Elsevier in Journal of Non-Crystalline Solids

Vol. 164-166, 31-36
https://doi.org/10.1016/0022-3093(93)90485-g

Abstract

No abstract available

This publication has 6 references indexed in Scilit:

Defect formation during growth of hydrogenated amorphous silicon
Physical Review B, 1993
Defect Formation Process during Growth of Hydrogenated Amorphous Silicon at High Temperatures
Japanese Journal of Applied Physics, 1992
Surface reactions during the a-Si : H growth in the diode and triode glow-discharge reactors
Surface Science, 1991
In situ characterization of the growing a-Si:H surface by IR spectroscopy
Journal of Non-Crystalline Solids, 1991
Numerical studies of epitaxial kinetics: What can computer simulation tell us about nonequilibrium crystal growth?
Journal of Vacuum Science & Technology A, 1990
Spatial Distribution of SiH₃ Radicals in RF Silane Plasma
Japanese Journal of Applied Physics, 1990

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