Extremely Low Resistance Non-Alloyed Ohmic Contacts to n-GaAs Using Compositionally Graded InxGa1-xAs Layers
- 1 October 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (10A), L865
- https://doi.org/10.1143/jjap.25.l865
Abstract
Silicon doping in lattice-mismatched In x Ga1-x As (x=0, 0.2, 0.35, 0.65, 1.0) films grown on GaAs by MBE is studied. The maximum carrier concentration for In x Ga1-x As is found to increase with the InAs mole fraction, x. Based on this result, the x dependence of the specific contact resistance, ρc, for non-alloyed ohmic contacts to n-GaAs using compositionally graded In x Ga1-x As layers is also investigated. It is found that ρc decreases with increasing x for x≤0.65, and an extremely low specific contact resistance of 5×10-8 Ω·cm2 is obtained with 1.5×1019 cm-3 doped n+-In0.65Ga0.35As.Keywords
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