Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and As4
- 1 March 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (3R)
- https://doi.org/10.1143/jjap.26.419
Abstract
The growth of undoped GaAs layers using molecular beams of triethylgallium (TEG) and elemental arsenic (As4) was studied. All epilayers showed a p-type conductivity caused by carbon as the main residual acceptor. The carrier concentration decreased as the As4-to-TEG pressure ratio was increased, resulting in the lowest value of p=3×1014 cm-3 at an As4-to-TEG pressure ratio of 67. A mass spectrometric analysis during growth revealed the formation of ethylarsine compounds.Keywords
This publication has 14 references indexed in Scilit:
- Classification of Surface Defects on GaAs Grown by Molecular Beam EpitaxyJournal of the Electrochemical Society, 1986
- MBE Growth of High-Quality GaAs Using Triethylgallium as a Gallium SourceJapanese Journal of Applied Physics, 1986
- Epitaxial growth from organometallic sources in high vacuumJournal of Vacuum Science & Technology B, 1986
- Metalorganic Molecular-Beam Epitaxial Growth and Characterization of GaAs Using Trimethyl- and Triethyl-Gallium SourcesJapanese Journal of Applied Physics, 1985
- Elimination of oval defects in epilayers by using chemical beam epitaxyApplied Physics Letters, 1985
- Selective area growth of GaAs and In0.53Ga0.47As epilayer structures by chemical beam epitaxy using silicon shadow masks: A demonstration of the beam natureApplied Physics Letters, 1985
- Gas Source MBE Growth of High-Quality InP Using Triethylindium and PhosphineJapanese Journal of Applied Physics, 1985
- GaAs growth in metal–organic MBEJournal of Vacuum Science & Technology B, 1985
- Gas source MBE of InP and GaxIn1−xPyAs1−y : Materials properties and heterostructure lasersJournal of Vacuum Science & Technology B, 1985
- Epitaxial films grown by vacuum MOCVDJournal of Crystal Growth, 1984