Gas Source MBE Growth of High-Quality InP Using Triethylindium and Phosphine
- 1 April 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (4A), L221
- https://doi.org/10.1143/jjap.24.l221
Abstract
High-quality InP layers have been grown on (100) InP substrates by gas source molecular beam epitaxy using triethyl-indium and phosphine as III and V group sources. The electrical and optical properties of grown InP films are evaluated and compared with those of films grown using red phosphorus as a P source. Epitaxial layers are n-type and the highest achieved 77 K mobility is 24000 cm2/Vs with a carrier concentration of 4.1×1015 cm-3. When phosphine is used instead of red phosphorus as a P source, the compensation ratio (NA/ND) decreases from 0.60–0.98 to 0.29–0.31.Keywords
This publication has 8 references indexed in Scilit:
- Chemical beam epitaxy of InP and GaAsApplied Physics Letters, 1984
- Molecular beam epitaxial growth of GaAs using trimethylgallium as a Ga sourceJournal of Applied Physics, 1984
- GaInAsP/InP heterostructure lasers emitting at 1.5 μm and grown by gas source molecular beam epitaxyApplied Physics Letters, 1984
- Electrical and optical properties of InP grown by molecular beam epitaxy using cracked phosphineApplied Physics Letters, 1983
- A PH3 cracking furnace for molecular beam epitaxyJournal of Vacuum Science & Technology A, 1983
- Metalorganic CVD of GaAs in a molecular beam systemJournal of Crystal Growth, 1981
- On the use of AsH3 in the molecular beam epitaxial growth of GaAsApplied Physics Letters, 1981
- Electron mobility and free-carrier absorption in InP; determination of the compensation ratioJournal of Applied Physics, 1980