Capture of photoexcited carriers in a single quantum well with different confinement structures
- 1 June 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 27 (6), 1669-1675
- https://doi.org/10.1109/3.89991
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Subpicosecond luminescence study of carrier transfer in InGaAs/InP multiple quantum wellsSuperlattices and Microstructures, 1990
- Intrasubband transitions and well capture via confined, guided and interface L0 phonons in superlatticesSuperlattices and Microstructures, 1989
- Dynamics of carrier capture in an InGaAs/GaAs quantum well trapApplied Physics Letters, 1989
- Non-equilibrium Carrier Kinetics in Quantum WellsJournal of Modern Optics, 1988
- Trapping of carriers in single quantum wells with different configurations of the confinement layersPhysical Review B, 1988
- Carrier trapping in single quantum wells with different confinement structuresApplied Physics Letters, 1987
- Alloy scattering potential in p-type Ga1−xAlxAsJournal of Applied Physics, 1983
- A graded-index waveguide separate-confinement laser with very low threshold and a narrow Gaussian beamApplied Physics Letters, 1981
- Symmetric separate confinement heterostructure lasers with low threshold and narrow beam divergence by m.b.e.Electronics Letters, 1980
- (GaAl)As lasers with a heterostructure for optical confinement and additional heterojunctions for extreme carrier confinementIEEE Journal of Quantum Electronics, 1973